SANUSI et al. (2008) Si3N4 MIM Capacitors Modeling for MMIC Applications

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Si3N4 MIM Capacitors Modeling for MMIC Applications

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CONTRIBUTORS:

	Author:	SANUSI, RASIDAH
	Author:	Ismail, Mohd Azmi
	Author:	Othman, Mohd. Nizam
	Author:	Abd. Rahim, A.I.
	Author:	Marzuki, A. (b. ----, d. ----)
	Author:	Yahya, Mohamed Razman
	Author:	Awang Mat, Abdul Fatah

JOURNAL:

CTDMM Newsletter, 1(1), 4 - 13.

YEAR:

2008

PUB TYPE:

Journal Article

SUBJECT(S):

Modeling, MMIC

DISCIPLINE:

Engineering and Applied Sciences

HTTP:

http://www.scribd.com/doc/6407242/CTDMM-Newsletter-August-2008

LANGUAGE:

English

PUB ID:

103-445-506 (Last edited on 2008/10/06 18:25:17 GMT-6)

SPONSOR(S):

ABSTRACT:
Silicon nitride (Si3N4) metal-insulator-metal (MIM) modelling at preliminary stage based on High Electron Mobility Transistor (HEMTS) on Gallium Arsenide (GaAs) substrates are presented. Device measurement and simulation of the Si3N4 MIM capacitor is performed in the frequency range of 2 to 50 GHz to generate S-parameters data. The behaviour of the capacitor as a function of the operating frequencies is studied. The equivalent circuit of Si3N4 MIM capacitor is proposed representing the behaviour of the devices.

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